报告题目：High-performance phase-change memory technology toward IoT era 面向IoT时代的高性能相变存储器技术
主讲人：日本群马大学尹友（You Yin）副教授
报告时间： 2018年11月20日（周二）上午10：00——11：30
报告地点：光电新大楼104 会议室
内容介绍：
We have entered into an unprecedented era of IoT with explosively growing information. More and more high-performance memories are required. Although currently flash memory is still mainstream nonvolatile memory, it is facing many serious problems such as slow speed, and bad endurance. Phase-change memory (PCM) is widely regarded as the next generation nonvolatile memory. It is based on rapid reversible phase-transformation between amorphous and crystalline phases of chalcogenide such as Ge2Sb2Te5. In this talk, the following contents will be covered. 1. Ultralow volume change chacogenide for high endurance, 2. Ultrahigh density PCM with more than 16 resistance levels, 3. Ultralow power consumption PCM.
报告人介绍：Biography of You Yin
You Yin received the Ph.D. degree in electrical engineering from Shanghai Jiao Tong University in 2003, respectively. He joined the Division of Electronics and Informatics at Gunma University where he is now Associate Professor. His current research interests are Micro/nano-electronic devices and systems for future's IoT & AI and renewable energy: Artificial synapses, nonvolatile memories, Quantum dot solar cells; Nano-fabrication: Electron beam lithography, Self assembly; Nano-metrology technology: Scanning probe microscopy, Atomic force microscopy, Scanning tunneling microscopy.
Dr. Yin has published more than 110 journal papers, and more than 30 papers in international and national conference proceedings. He has been awarded grants from the Ministry of Education, Culture, Sports, Science and Technology of Japan. In addition, Dr. Yin has served as a technical reviewer for various journals, technical program committee for international conferences, and guest editor of special issue.